Veloso, Anabela: шукати на сайті Z-Library

Рік:

2015

Мова:

english

Файл:

PDF, 4.24 MB

english, 2015

(Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs

Veloso, Anabela, Paraschiv, Vasile, Vecchio, Emma, Devriendt, Katia, Li, Waikin, Simoen, Eddy, Chan, B. T., Tao, Zheng, Rosseel, Erik, Loo, Roger, Milenin, Alexey P., Kunert, Bernardette, Teugels, Lie

Журнал:

Nicoletti, Talitha, Santos, Sara Dereste dos, Martino, João Antonio, Aoulaiche, Marc, Veloso, Anabela, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor

Рік:

2017

Мова:

english

Файл:

PDF, 11.26 MB

english, 2017

Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation

Журнал:

Solid-State Electronics

Рік:

2014

Мова:

english

Файл:

PDF, 786 KB

english, 2014

[IEEE 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Garden Grove, CA, USA (2016.9.11-2016.9.16)] 2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - vfTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires

Chen, Shih-Hung, Linten, Dimitri, Hellings, Geert, Veloso, Anabela, Scholz, Mirko, Boschke, Roman, Groeseneken, Guido, Collaert, Nadine, Horiguchi, Naoto, Thean, Aaron

Рік:

2016

Мова:

english

Файл:

PDF, 1.73 MB

english, 2016

The effects of deforestation and urbanization on sustainable growth in Asian countries

Arshad, Zeeshan, Robaina, Margarita, Shahbaz, Muhammad, Veloso, Anabela Botelho

Журнал:

Environmental Science and Pollution Research

Рік:

2020

Мова:

english

Файл:

PDF, 608 KB

english, 2020

(Invited) Gate-All-Around Nanosheet Field-Effect Transistors for Advanced Logic and Memory Applications: Integration and Device Features

Veloso, Anabela, Matagne, Philippe, Eneman, Geert, Mertens, Hans, Chasin, Adrian, Simoen, Eddy, Horiguchi, Naoto

Журнал:

Perina, Welder Fernandes, Silva, Vanessa Cristina Pereira, Martino, Joao Antonio, Agopian, Paula Ghedini Der, Simoen, Eddy, Veloso, Anabela

Рік:

2020

Файл:

PDF, 1.16 MB

2020

Intrinsic Voltage Gain of Stacked GAA Nanosheet MOSFETs Operating at High Temperatures

Журнал:

Microelectronic Engineering

Рік:

2020

Файл:

PDF, 246 KB

2020

Ni fully silicided gates for 45 nm CMOS applications

Jorge A. Kittl, Anne Lauwers, Malgorzata A. Pawlak, Mark J.H. van Dal, Anabela Veloso, K.G. Anil, Geoffrey Pourtois, Caroline Demeurisse, Tom Schram, Bert Brijs, Muriel de Potter, Christa Vrancken, Ka

Журнал:

Рік:

2005

Мова:

english

Файл:

PDF, 640 KB

english, 2005

On the efficiency of stress techniques in gate-last n-type bulk FinFETs

Geert Eneman, Nadine Collaert, Anabela Veloso, An De Keersgieter, Kristin De Meyer, Thomas Y. Hoffmann, Naoto Horiguchi, Aaron Thean

Журнал:

Solid-State Electronics

Рік:

2012

Мова:

english

Файл:

PDF, 1.40 MB

english, 2012

Improved Channel Hot-Carrier Reliability in $p$-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Cho, Moonju, Arimura, Hiroaki, Lee, Jae Woo, Kaczer, Ben, Veloso, Anabela, Boccardi, Guillaume, Ragnarsson, Lars-Ake, Kauerauf, Thomas, Horiguchi, Naoto, Groeseneken, Guido

Журнал:

IEEE Transactions on Device and Materials Reliability

Рік:

2014

Мова:

english

Файл:

PDF, 992 KB

english, 2014

(Invited) Impact of the Metal Gate on the Oxide Stack Quality Assessed by Low-Frequency Noise

Simoen, Eddy, He, Liang, O'Sullivan, Barry, Veloso, Anabela, Horiguchi, Naoto, Collaert, Nadine, Claeys, Cor

Журнал:

Рік:

2017

Мова:

english

Файл:

PDF, 988 KB

english, 2017

Junctionless Versus Inversion-Mode Gate-All-Around Nanowire Transistors From a Low-Frequency Noise Perspective

Simoen, Eddy, Veloso, Anabela, Matagne, Philippe, Collaert, Nadine, Claeys, Cor

Журнал:

Singh, Ramendra, Aditya, Kritika, Veloso, Anabela, Parvais, Bertrand, Dixit, Abhisek

Рік:

2018

Мова:

english

Файл:

PDF, 1.24 MB

english, 2018

Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETs

Журнал:

Microelectronic Engineering

Рік:

2019

Мова:

english

Файл:

PDF, 4.46 MB

english, 2019

Weibull slope and voltage acceleration of ultra-thin (1.1–1.45 nm EOT) oxynitrides

Robert O'Connor, Robin Degraeve, Ben Kaczer, Anabela Veloso, Greg Hughes, Guido Groeseneken

Журнал:

Рік:

2004

Мова:

english

Файл:

PDF, 199 KB

english, 2004

On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs

dos Santos, Sara D., Nicoletti, Talitha, Martino, João Antonio, Aoulaiche, Marc, Veloso, Anabela, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor

Журнал:

ACS Applied Materials & Interfaces

Рік:

2013

Мова:

english

Файл:

PDF, 1.49 MB

english, 2013

Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor

Lee, Jae Woo, Simoen, Eddy, Veloso, Anabela, Cho, Moon Ju, Boccardi, Guillaume, Ragnarsson, Lars-Åke, Chiarella, Thomas, Horiguchi, Naoto, Groeseneken, Guido, Thean, Aaron

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 1.76 MB

english, 2013

1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Woo Lee, Jae, ju Cho, Moon, Simoen, Eddy, Ritzenthaler, Romain, Togo, Mitsuhiro, Boccardi, Guillaume, Mitard, Jerome, Ragnarsson, Lars-Åke, Chiarella, Thomas, Veloso, Anabela, Horiguchi, Naoto, Thean

Журнал:

Applied Physics Letters

Рік:

2013

Мова:

english

Файл:

PDF, 802 KB

english, 2013

Posters: Physiology

Nicoletti, Talitha, Santos, Sara Dereste dos, Martino, João Antonio, Aoulaiche, Marc, Veloso, Anabela, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor

Журнал:

NeuroImage

Рік:

1997

Мова:

english

Файл:

PDF, 4.95 MB

english, 1997

Errata do artigo “Quem deveria participar na definição das prioridades em saúde e como deveriam essas prioridades ser estabelecidas? resultados de um inquérito em Portugal”

Botelho, Anabela, Moreira Pinho, Micaela, Veiga, Paula Alexandra Correia Veloso

Журнал:

Revista Portuguesa de Saúde Pública

Рік:

2014

Файл:

PDF, 311 KB

2014

Who should participate in health care priority setting and how should priorities be set? Evidence from a Portuguese survey

Botelho, Anabela, Pinho, Micaela Moreira, Veiga, Paula Alexandra Correia Veloso

Журнал:

Revista Portuguesa de Saúde Pública

Рік:

2013

Мова:

english

Файл:

PDF, 739 KB

english, 2013

Work-Function Engineering for 32-nm-Node pMOS Devices: High-Performance TaCNO-Gated Films

O'Sullivan, Barry J., Mitsuhashi, Riichirou, Ito, Satoru, Oikawa, Kota, Kubicek, Stefan, Paraschiv, Vasile, Adelmann, Christoph, Veloso, Anabela, Yu, HongYu, Schram, Tom, Biesemans, Serge, Nakabayashi

Журнал:

IEEE Electron Device Letters

Рік:

2008

Мова:

english

Файл:

PDF, 117 KB

english, 2008

Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate

Lee, Jae Woo, Simoen, Eddy, Veloso, Anabela, Cho, Moon Ju, Arimura, Hiroaki, Boccardi, Guillaume, Ragnarsson, Lars-Ake, Chiarella, Thomas, Horiguchi, Naoto, Thean, Aaron, Groeseneken, Guido

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 543 KB

english, 2013

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

Simoen, Eddy, Veloso, Anabela, Higuchi, Yuichi, Horiguchi, Naoto, Claeys, Cor

Журнал:

Veloso, Anabela, Freitas, Paulo P.

Рік:

2013

Мова:

english

Файл:

PDF, 1.46 MB

english, 2013

[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Implementing cubic-phase HfO2 with κ-value ∼ 30 in low-VT replacement gate pMOS devices for improved EOT-Scaling and reliability

Ragnarsson, Lars-Ake, Adelmann, Christoph, Higuchi, Yuichi, Opsomer, Karl, Veloso, Anabela, Chew, Soon Aik, Rohr, Erika, Vecchio, Emma, Shi, Xiaoping, Devriendt, Katia, Sebaai, Farid, Kauerauf, Thomas

Рік:

2012

Мова:

english

Файл:

PDF, 554 KB

english, 2012

Spin valve sensors with synthetic free and pinned layers

Журнал:

Journal of Applied Physics

Рік:

2000

Мова:

english

Файл:

PDF, 743 KB

english, 2000

[IEEE ESSDERC 2007 - 37th European Solid State Device Research Conference - Muenchen, Germany (2007.09.11-2007.09.13)] ESSDERC 2007 - 37th European Solid State Device Research Conference - Demonstration of phase-controlled Ni-FUSI CMOSFETs employing SiON dielectrics capped with sub-monolayer ALD HfSiON for low power applications

HongYu Yu,, Shou-Zen Chang,, Veloso, Anabela, Lauwers, Anne, Delabie, Annelies, Everaert, Jean-Luc, Singanamalla, Raghunath, Kerner, Christoph, Vrancken, Christa, Brus, Stephan, Absil, Philippe, Hof

Рік:

2007

Мова:

english

Файл:

PDF, 292 KB

english, 2007

Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High- k Last Replacement Metal Gate Technology

Veloso, Anabela, Chew, Soon Aik, Higuchi, Yuichi, Ragnarsson, Lars-Åke, Simoen, Eddy, Schram, Tom, Witters, Thomas, Ammel, Annemie Van, Dekkers, Harold, Tielens, Hilde, Devriendt, Katia, Heylen, Nancy

Журнал:

Eneman, Geert, Collaert, Nadine, Veloso, Anabela, De Keersgieter, An, De Meyer, Kristin, Hoffmann, Thomas Y.

Рік:

2013

Мова:

english

Файл:

PDF, 1.87 MB

english, 2013

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - On the efficiency of stress techniques in gate-last N-type bulk FinFETs

Рік:

2011

Мова:

english

Файл:

PDF, 1.16 MB

english, 2011

[ECS 212th ECS Meeting - Washington, DC (October 7 - October 12, 2007)] ECS Transactions - Challenges with Respect to High-k/Metal Gate Stack Etching and Cleaning

Vos, Rita, Arnauts, Sophia, Bovie, Inge, Onsia, Bart, Garaud, Sylvain, Xu, Kaidong, Hongyu, Yu, Kubicek, Stefan, Rohr, Erika, Schram, Tom, Veloso, Anabela, Conard, Thierry, Leunissen, Leonardus H.A.,

Рік:

2007

Мова:

english

Файл:

PDF, 501 KB

english, 2007

Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue

Sebaai, Farid, Veloso, Anabela, Takahashi, Hiroaki, Pacco, Antoine, Claes, Martine, Schaekers, Marc, de Gendt, Stefan, Mertens, Paul W., Struyf, Herbert

Журнал:

Solid State Phenomena

Рік:

2012

Мова:

english

Файл:

PDF, 425 KB

english, 2012

Two- and Three-Dimensional Fully-Depleted Extension-Less Devices for Advanced Logic and Memory Applications

Veloso, Anabela, Keersgieter, An De, Aoulaiche, Marc, Jurczak, Malgorzata, Thean, Aaron, Horiguchi, Naoto

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 815 KB

english, 2013

W versus Co–Al as Gate Fill-Metal for Aggressively Scaled Replacement High- k /Metal Gate Devices for (Sub-)22 nm Technology Nodes

Veloso, Anabela, Chew, Soon Aik, Schram, Tom, Dekkers, Harold, Ammel, Annemie Van, Witters, Thomas, Tielens, Hilde, Heylen, Nancy, Devriendt, Katia, Sebaai, Farid, Brus, Stephan, Ragnarsson, Lars-Åke,

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 1.52 MB

english, 2013

Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high- k last devices and enabling a simplified scalable CMOS integration scheme

Veloso, Anabela, Boccardi, Guillaume, Ragnarsson, Lars-Åke, Higuchi, Yuichi, Arimura, Hiroaki, Lee, Jae Woo, Simoen, Eddy, Cho, Moon Ju, Roussel, Philippe J., Paraschiv, Vasile, Shi, Xiaoping, Schram,

Журнал:

IEEE Electron Device Letters

Рік:

2014

Мова:

english

Файл:

PDF, 813 KB

english, 2014

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Advanced FinFET Devices for Sub-32nm Technology Nodes: Characteristics and Integration Challenges

Veloso, Anabela, Collaert, Nadine, De Keersgieter, An, Witters, Liesbeth, Rooyackers, Rita, Van Dal, Mark J., Duffy, Ray, Pawlak, Bartek J., Lander, Rob J., Hoffmann, Thomas, Biesemans, Serge, Jurczak

Рік:

2009

Мова:

english

Файл:

PDF, 1.83 MB

english, 2009

Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate

Sebaai, Farid, Veloso, Anabela, Claes, Martine, Devriendt, Katia, Brus, Stephan, Absil, Philippe, Mertens, Paul W., de Gendt, Stefan

Журнал:

Solid State Phenomena

Рік:

2012

Мова:

english

Файл:

PDF, 638 KB

english, 2012

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - The Combination of Embedded Si

Verheyen, Peter, Severi, Simone, Eneman, Geert, Loo, Roger, Shamiryan, Denis, Rooyackers, Rita, Demand, Marc, Veloso, Anabela, Lauwers, Anne, De Meyer, Krtistien, Absil, Philip, Jurczak, Malgorzata, B

Рік:

2006

Мова:

english

Файл:

PDF, 925 KB

english, 2006

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Gate Stack Influence on GIFBE in nFinFETs

Martino, Joao A., Rodrigues, Michele, Mercha, Abdelkarim, Simoen, Eddy, Veloso, Anabela, Collaert, Nadine, Jurczak, Malgorzata, Claeys, Cor

Рік:

2009

Мова:

english

Файл:

PDF, 815 KB

english, 2009

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - Galvanic Corrosion of PN Junctions during the Dielectric Removal with HF for RMG Transistors

Pacco, Antoine, Sebaai, Farid, Suhard, Samuel, Struyf, Herbert, De Gendt, Stefan, Vos, Rita, Veloso, Anabela, Mertens, Paul W.

Рік:

2011

Мова:

english

Файл:

PDF, 276 KB

english, 2011

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies

Kittl, Jorge A., Lauwers, Anne, van Dal, Mark, Yu, Hongyu, Veloso, Anabela, Hoffmann, Tom, Pawlak, Malgorzata, Demeurisse, Caroline, Kubicek, Stefan, Niwa, Masaaki, Vrancken, Christa, Absil, Philip, B

Рік:

2006

Мова:

english

Файл:

PDF, 612 KB

english, 2006

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - Development of a Wet Silicon Removal Process for Replacement Metal Gate and Sacrificial Fin

Suhard, Samuel, Sebaai, Farid, Pacco, Antoine, Veloso, Anabela, Carbonell, Laureen, Claes, Martine, Struyf, Herbert, Mertens, Paul W., De Gendt, Stefan

Рік:

2011

Мова:

english

Файл:

PDF, 819 KB

english, 2011

[ECS 208th ECS Meeting - Los Angeles, California (October 16-October 21, 2005)] ECS Transactions - Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation

Kaushik, Vidya S., Rohr, Erika, Hyun, Sangjin, De Gendt, Stefan, Van Elshocht, Sven, Delabie, Annelies, Everaert, Jean-Luc, Veloso, Anabela, Brus, Stephan, Ragnarsson, Lars-Ake, Richard, Olivier, Caym

Рік:

2006

Мова:

english

Файл:

PDF, 377 KB

english, 2006

Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs

Fang, Wen, Veloso, Anabela, simoen, Eddy, Cho, M, Collaert, Nadine, Thean, Aaron, Luo, Jun, Zhao, Chao, Ye, Tianchun, Claeys, Cor

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 493 KB

english, 2016

Technology development challenges for advanced group IV semiconductor devices

Claeys, Cor, Arimura, Hiro, Collaert, Nadine, Mitard, Jerome, Rooyackers, Rita, Simoen, Eddy, Vandooren, Anne, Veloso, Anabela, Waldron, Niamh, Witters, Liesbeth, Thean, Aaron

Журнал:

physica status solidi (a)

Рік:

2016

Мова:

english

Файл:

PDF, 3.02 MB

english, 2016

Junctionless vs. Inversion-mode Lateral Semiconductor Nanowire Transistors

Veloso, Anabela, Matagne, Philippe, Simoen, Eddy, Kaczer, Ben, Eneman, Geert, Mertens, Hans, Yakimets, Dmitry, Parvais, Bertrand, Mocuta, Dan

Журнал:

Journal of Physics Condensed Matter

Рік:

2018

Мова:

english

Файл:

PDF, 2.74 MB

english, 2018

Size Independent pH Sensitivity for Ion Sensitive FinFETs down to 10 nm Width

Gupta, Mihir, Santermans, Sybren, Veloso, Anabela, Tao, Zheng, Li, Waikin, Hellings, Geert, Lagae, Liesbet, Van Roy, Willem, Martens, Koen

Журнал:

IEEE Sensors Journal

Рік:

2019

Мова:

english

Файл:

PDF, 844 KB

english, 2019

[ACM Press the 56th Annual Design Automation Conference 2019 - Las Vegas, NV, USA (2019.06.02-2019.06.06)] Proceedings of the 56th Annual Design Automation Conference 2019 on - DAC '19 - Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications

Huynh-Bao, Trong, Furnemont, Arnaud, Kar, Gouri, Mocuta, Anda, Veloso, Anabela, Sakhare, Sushil, Matagne, Philippe, Ryckaert, Julien, Perumkunnil, Manu, Crotti, Davide, Yasin, Farrukh, Spessot, Alessi

Рік:

2019

Мова:

english

Файл:

PDF, 3.14 MB

english, 2019

Low–Frequency Noise in Vertically Stacked Si n–Channel Nanosheet FETs

De Oliveira, Alberto V., Veloso, Anabela, Claeys, Cor, Horiguchi, Naoto, Simoen, Eddy

Журнал:

IEEE Electron Device Letters

Рік:

2020

Мова:

english

Файл:

PDF, 1022 KB

english, 2020

[IEEE 2019 IEEE 13th International Conference on ASIC (ASICON) - Chongqing, China (2019.10.29-2019.11.1)] 2019 IEEE 13th International Conference on ASIC (ASICON) - Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors

Simoen, Eddy, Oliveira, Alberto Vinicius, Veloso, Anabela, Chasin, Adrian Vaisman, Ritzenthaler, Romain, Mertens, Hans, Horiguchi, Naoto, Claeys, Cor

Рік:

2019

Файл:

PDF, 1.30 MB

2019

(Keynote) Gate-All-Around Nanowire & Nanosheet FETs for Advanced, Ultra-Scaled Technologies

Veloso, Anabela, Matagne, Philippe, Jang, Doyoung, Huynh-Bao, Trong, Chasin, Adrian, Simoen, Eddy, Eneman, Geert, De Keersgieter, An, Mertens, Hans, Horiguchi, Naoto

Журнал:

Рік:

2020

Файл:

PDF, 1.49 MB

2020

On the Correlation Between Static and Low-Frequency Noise Parameters of Vertical Nanowire nMOSFETs

Simoen, Eddy, Chasin, Adrian, Matagne, Philippe, Rosseel, Erik, Hikavyy, Andriy Yakovitch, Loo, Roger, Favia, Paola, Bender, Hugo, Vancoille, Eric, Veloso, Anabela

Журнал: